IXFH6N100Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, High dv/dt
IXFH 6N100Q
IXFT 6N100Q
V_DSS
I_D25
R_DS(on)
= 1000 V
= 6A
= 1.9 Ω
t_rr ≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C,
pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
6
A
24
A
6
A
20
mJ
700
mJ
5
V/ns
180
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Test Conditions
V_GS = 0 V, I_D = 1 mA
V_DS = V_GS, I_D = 2.5 mA
V_GS = ±20 V_DC, V_DS = 0
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min.
typ.
max.
1000
V
2.0
4.5 V
±100 nA
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{IXYS advanced low Qg process}
z _{Low gate charge and capacitances}
- easier to drive
- faster switching
z _{International standard packages}
z _{Low RDS (on)}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Molding epoxies meet UL 94 V-0}
flammability classification
V_DS = 0.8 V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
50 µA
1 mA
1.9 Ω
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 1999 IXYS All rights reserved
98561A (6/99)