IXFH58N20Q Datasheet, PDF (2/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs

IXFH 58N20Q
IXFT 58N20Q
Symbol
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g(on)
Q_gs
Q_gd
R_thJC
R_thCK
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
V_DS = 10 V; I_D = 0.5 I_D25, pulse test
24 34
S
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
3600
pF
870
pF
280
pF
V_GS = 10 V, V_DS = 0.5 V_DSS, I_D = 0.5 I_D25
R_G = 1.5 Ω (External)
20
ns
40
ns
40
ns
13
ns
V_GS = 10 V, V_DS = 0.5 V_DSS, I_D = 0.5 I_D25
(TO-247)
98 140 nC
25 35 nC
45 70 nC
0.42 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_S
V_GS = 0 V
I_SM
Repetitive;
V_SD
I_F = I_S, V_GS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
58 A
232 A
1.5 V
t_rr
Q_RM
I_F = I_S-di/dt = 100 A/µs, V_R = 100 V
I_RM
200 ns
0.7
µC
7
A
TO-247 AD Outline
123
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A₁
2.2 2.54
A₂
2.2 2.6
b
1.0 1.4
b₁ 1.65 2.13
b₂ 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min. Recommended Footprint
Dimensions in mm and inches
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025