IXFH58N20Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q_g
Preliminary data sheet
IXFH 58N20Q
IXFT 58N20Q
V_DSS =
I_D25 =
= R_DS(on)
200 V
58 A
40 mW
t_rr £ 200 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
200
V
200
V
±20
V
±30
V
58
A
232
A
58
A
30
mJ
1.0
J
5
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.0
4.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
25 µA
1 mA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
40 m Ω
TO-268 (D3) (IXFT) Case Style
G
S
TO-247 AD
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{IXYS advanced low Qg process}
l _{International standard packages}
l _{Low gate charge and capacitance}
- easier to drive
- faster switching
l _{Low RDS (on)}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Molding epoxies meet UL 94 V-0}
flammability classification
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 1999 IXYS All rights reserved
98523A (5/99)