IXFC16N80P Datasheet, PDF (2/2 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET ISOPLUS220

IXFC 16N80P
Symbol
g_fs
C
iss
C
oss
C
rss
t_d(on)
t_r
t_d(off)
t_f
Q_g(on)
Q_gs
Q_gd
R_thJC
R_thCS
Test Conditions
Characteristic Values
(T_J = 25° C unless otherwise specified)
Min. Typ. Max.
V_DS= 20 V; I_D = I_T, pulse test
9
16
S
V = 0 V, V = 25 V, f = 1 MHz
GS
DS
4600
pF
330
pF
23
pF
V_GS = 10 V, V_DS = 0.5 V_DSS, I_D = I_T
R_G = 5 Ω (External)
27
ns
32
ns
75
ns
29
ns
V_GS= 10 V, V_DS = 0.5 V_DSS, I_D = I_T
71
nC
21
nC
23
nC
0.82 ° C/W
0.21
° C/W
ISOPLUS220^TM (IXFC) Outline
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T_J = 25° C unless otherwise specified)
Min. Typ. Max.
I_S
V_GS = 0 V
16 A
I
Repetitive
SM
48 A
V_SD
I_F = I_S, V_GS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
1.5 V
t_rr
I_F = 16 A, -di/dt = 100 A/µs
I_RM
V_R = 100 V, V_GS = 0 V
Q
RM
250 ns
7
A
0.8
µC
Note 1: Test Current I_T = 8 A
Ref: IXYS CO 0177 R0
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated objective result. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537