IXFC16N80P Datasheet, PDF (1/2 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET ISOPLUS220

Advance Technical Information
PolarHV^TM HiPerFET
Power MOSFET
ISOPLUS220^TM
(Electrically Isolated Back Surface)
IXFC 16N80P
V=
DSS
I_D25 =
≤ R_DS(on)
t_rr
≤
800
9
650
250
V
A
mΩ
ns
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
Test Conditions
ISOPLUS220^TM (IXFC)
Maximum Ratings
E153432
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I
AR
E_AR
E_AS
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T
C
= 25° C
T_C = 25° C
T_C = 25° C
800
800
± 30
± 40
9
48
8
30
1.5
V
V
V
V
G
DS
A
A
A
mJ
G = Gate
S = Source
J
Isolated back surface
D = Drain
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 5 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
Symbol
Test Conditions
(T_J = 25° C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
10
V/ns
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
2500
V~
11..65/2.5..15
N/lb
2
g
Characteristic Values
Min. Typ. Max.
800
V
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<35pF)}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Fast intrinsic Rectifier}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
V
GS(th)
I_GSS
I_DSS
R_DS(on)
V = V , I = 4 mA
3.0
DS
GS D
V_GS = ±30 V, V_DS = 0 V
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
V_GS = 10 V, I_D = I_T, (Note 1)
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
5.0
±100
25
250
650
V _Advantages
nA ^{z Easy assembly: no screws, or isolation}
foils required
µA ^{z Space savings}
µA ^{z High power density}
z _{Low collector capacitance to ground}
mΩ _{(low EMI)}
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DS99604E(07/06)