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IXFB90N85X Datasheet, PDF (2/5 Pages) IXYS Corporation – Advance Technical Information
◁
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 45A, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 45A
RG = 1(External)
VGS = 10V, VDS = 0.5 • VDSS, ID = 45A
Characteristic Values
Min. Typ. Max
37
62
S
0.60

13.3
nF
13.0
nF
220
pF
395
pF
1820
pF
50
ns
20
ns
126
ns
8
ns
340
nC
78
nC
190
nC
0.07C/W
0.13C/W
IXFB90N85X
PLUS264TM (IXFB) Outline
A
E
Q
R
Q1
D
R1
12 3
L1
L
b1
b2
e
4
b
c
A1
Back Side
1 - Gate
2,4 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS , VGS = 0V, Note 1
trr
QRM
IRM
IF = 45A, -di/dt = 200A/s
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
90 A
360 A
1.4 V
250
ns
5.3
 μC
42.0
A
Note 1. Pulse test, t  300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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