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| IXFB90N85X Datasheet, PDF (1/5 Pages) IXYS Corporation – Advance Technical Information | |||
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Advance Technical Information
X-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB90N85X
VDSS =
ID25 =
RDS(on) ï£
850V
90A
41mï
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25ï°C to 150ï°C
TJ = 25ï°C to 150ï°C, RGS = 1Mï
Continuous
Transient
Maximum Ratings
850
V
850
V
ï± 30
V
ï± 40
V
TC = 25ï°C
TC = 25ï°C, Pulse Width Limited by TJM
TC = 25ï°C
TC = 25ï°C
TC = 25ï°C
IS ï£ IDM, VDD ï£ VDSS, TJ ï£ 150°C
90
180
45
4
1785
50
-55 ... +150
150
-55 ... +150
A
A
A
J
W
V/ns
ï°C
ï°C
ï°C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force
30..120 / 6.7..27
N/lb
10
g
PLUS264TM
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
ï¬ Low QG
ï¬ Avalanche Rated
ï¬ Low Package Inductance
Advantages
ï¬ High Power Density
ï¬ Easy to Mount
ï¬ Space Savings
Symbol
Test Conditions
(TJ = 25ï°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = ï± 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125ï°C
RDS(on)
VGS = 10V, ID = 0.5 ⢠ID25, Note 1
Characteristic Values
Min. Typ. Max.
850
V
3.5
5.5 V
ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï±ï 200 nA
50 ïA
5 mA
41 mï
Applications
ï¬ Switch-Mode and Resonant-Mode
ï ï ï Power Supplies
ï¬ DC-DC Converters
ï¬ PFC Circuits
ï¬ AC and DC Motor Drives
ï¬ Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved
DS100726(5/16)
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