IXBN42N170A Datasheet, PDF (2/6 Pages) IXYS Corporation – High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Symbol Test Conditions
(T_J = 25°C Unless Otherwise Specified)
g_fs
I_C = I_C90, V_CE = 10V, Note 1
C_ies
C_oes
C_res
V_CE = 25V, V_GE = 0V, f = 1MHz
Q_g(on)
Q_ge
Q_gc
I_C = I_C90, V_GE = 15V, V_CE = 0.5 • V_CES
t_d(on)
t_ri
E_on
t_d(off)
t_fi
E_off
Inductive load, T_J = 25°C
I_C = I_C90, V_GE = 15V
V_CE = 0.5 • V_CES, R_G = 1Ω
Diode Type = DH40-18A
Note 2
t_d(on)
t_ri
E_on
t_d(off)
t_fi
E_off
Inductive load, T_J = 125°C
I_C = I_C90, V_GE = 15V
V_CE = 0.5 • V_CES, R_G = 1Ω
Diode Type = DH40-18A
Note 2
R_thJC
R_thCS
Characteristic Values
Min.
Typ. Max.
14
23
S
3920
pF
275
pF
107
pF
188
nC
23
nC
80
nC
19
ns
17
ns
3.43
mJ
200
ns
20
ns
0.43
mJ
19
ns
14
ns
5.40
mJ
226
ns
82
ns
0.83
mJ
0.40 °C/W
0.05
°C/W
Reverse Diode
Symbol Test Conditions
(T_J = 25°C Unless Otherwise Specified)
V_F
I_F = I_C90, V_GE = 0V
t_rr
I_F = 25A, V_GE = 0V, -di_F/dt = 50A/μs
I_RM
V_R = 100V, V_GE = 0V
Characteristic Values
Min. Typ. Max.
5.0 V
330
ns
15
A
IXBN42N170A
SOT-227B miniBLOC (IXXN)
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2