IXBN42N170A Datasheet, PDF (1/6 Pages) IXYS Corporation – High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Preliminary Technical Information
High Voltage, High Gain
BIMOSFET^TM Monolithic
Bipolar MOS Transistor
IXBN42N170A
V_CES =
I_C90 =
V_CE(sat) ≤
t_fi
=
1700V
21A
6.0V
20ns
E
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
T_SC
(SCSOA)
P_C
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_C = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 10Ω
Clamped Inductive Load
V_GE = 15 V, V_CES = 1200V, T_J = 125°C
R_G = 10Ω, non repetitive
T_C = 25°C
50/60Hz
I_ISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1700
V
1700
V
± 20
V
± 30
V
38
A
21
A
265
A
I_CM = 84
A
1360
V
10
313
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
μs
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 750μA, V_CE = V_GE
I_CES
V_CE = 0.8 • V_CES, V_GE = 0V
I_GES
V_CE(sat)
V_CE = 0V, V_GE = ± 20V
I_C = I_C90, V_GE = 15V, Note 1
Characteristic Values
Min.
Typ. Max.
1700
V
2.5
5.5 V
T_J = 125°C
50 μA
1.5 mA
±100 nA
5.2
6.0 V
T_J = 125°C
5.3
V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z _{International Standard Package}
z _{miniBLOC, with Aluminium Nitride}
Isolation
z _{Square RBSOA}
z _{2500V~ Isolation Voltage}
z _{High Blocking Voltage}
z _{International Standard Package}
z _{Anti-Parallel Diode}
z _{Low Conduction Losses}
Advantages
z _{Low Gate Drive Requirement}
z _{High Power Density}
Applications
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{Uninterruptible Power Supplies (UPS)}
z _{AC Motor Drives}
z _{Capacitor Discharge Circuits}
z _{AC Switches}
© 2012 IXYS CORPORATION, All Rights Reserved
DS98933A(11/12)