DEIC420 Datasheet, PDF (2/7 Pages) IXYS Corporation – 20 Ampere Low-Side Ultrafast RF MOSFET Driver

Absolute Maximum Ratings
Parameter
Supply Voltage
All Other Pins
Power Dissipation
TAMBIENT ≤25 ^oC
TCASE ≤25 ^oC
Storage Temperature
Soldering Lead Temperature
(10 seconds maximum)
Value
30V
-0.3V to VCC + 0.3V
2W
100W
-65oC to 150oC
300oC
DEIC420
Parameter
Value
Maximum Junction Temperature _150oC
Operating Temperature Range
-40oC to 85oC
Thermal Impedance (Junction To Case)
θJC
0.13oC/W
Electrical Characteristics
Unless otherwise noted, T_A = 25 ^oC, 8V ≤ V_CC ≤ 30V .
All voltage measurements with respect to DGND. DEIC420 configured as described in Test Conditions.
Symbol
V_IH
V_IL
V_IN
I_IN
Parameter
High input voltage
Low input voltage
Input voltage range
Input current
Test Conditions
0V ≤ V_IN ≤ V_CC
Min
Typ
3.5
-5
-10
V_OH
V_OL
R_OH
R_OL
I_PEAK
High output voltage
Low output voltage
Output resistance
@ Output high
Output resistance
@ Output Low
Peak output current
I_OUT = 10mA, V_CC = 15V
I_OUT = 10mA, V_CC = 15V
V_CC = 15V
V_CC - .025
0.4
0.4
20
I_DC
Continuous output
current
f_MAX
Maximum frequency
C_L=4nF Vcc=15V
t_R
Rise time ⁽¹⁾
t_F
Fall time ⁽¹⁾
C_L=1nF Vcc=15V V_OH=2V to 12V
3
C_L=4nF Vcc=15V V_OH=2V to 12V
4
C_L=1nF Vcc=15V V_OH=12V to 2V
3
C_L=4nF Vcc=15V V_OH=12V to 2V
3.5
t_ONDLY
On-time propagation
C_L=4nF Vcc=15V
32
delay ⁽¹⁾
t_OFFDLY
Off-time propagation
C_L=4nF Vcc=15V
29
delay ⁽¹⁾
P_{W min}
Minimum pulse width
FWHM C_L=1nF Vcc=15V
8
+3V to +3V C_L=1nF Vcc=15V
9
V_CC
Power supply voltage
8
15
I_CC
Power supply current
V_IN = 3.5V
1
V_IN = 0V
0
V_IN = + V_CC
(1) _{Refer to Figures 3a and 3b}
Specifications Subject To Change Without Notice
Max
0.8
V_CC + 0.3
10
Units
V
V
V
µA
V
0.025
V
0.6
Ω
0.6
Ω
A
4
A
45
MHz
ns
ns
ns
ns
38
ns
35
ns
ns
ns
30
V
3
mA
10
µA
10
µA
2