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| DE375-102N10A_09 Datasheet, PDF (2/5 Pages) IXYS Corporation – RF Power MOSFET | |||
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Symbol
Test Conditions
RG
Ciss
Coss
Crss
Cstray
Td(on)
Ton
Td(off)
Toff
Qg(on)
Qgs
Qgd
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Back Metal to any Pin
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 ⦠(External)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Source-Drain Diode
Symbol
IS
ISM
VSD
Trr
QRM
IRM
Test Conditions
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t ⤠300 µs, duty cycle ⤠2%
IF = IS, -di/dt = 100A/µs,
VR = 100V
DE375-102N10A
RF Power MOSFET
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
0.3
â¦
2750
pF
110
pF
20
pF
33
pF
5
ns
3
ns
5
ns
8
ns
81
nC
16
nC
42
nC
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
10
A
80
A
1.5
V
200
ns
0.6
µC
7
A
For detailed device mounting and installation instructions, see the âDevice Installation & Mounting Instructionsâ technical
note on the IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
5,034,796
5,049,961
5,063,307
5,187,117
5,381,025
5,640,045
4,931,844
5,237,481
5,017,508
5,486,715
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