DE375-102N10A_09 Datasheet, PDF (1/5 Pages) IXYS Corporation – RF Power MOSFET

DE375-102N10A
RF Power MOSFET
N-Channel Enhancement Mode
Low Q_g and R_g
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
Symbol
V_DSS
V_DGR
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Maximum Ratings
1000
V
1000
V
V_DSS = 1000 V
I_D25
= 10 A
R_DS(on) ≤ _{1.2 Ω}
P_DC
= 940 W
V_GS
Continuous
±20
V
V_GSM
Transient
±30
V
I_D25
T_c = 25°C
10
A
I_DM
T_c = 25°C, pulse width limited by T_JM
60
A
I_AR
T_c = 25°C
10
A
E_AR
T_c = 25°C
30 mJ
dv/dt
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
5 V/ns
>200 V/ns
P_DC
P_DHS
T_c = 25°C
Derate 4.4W/°C above 25°C
940 W
425
W ^GATE
DRAIN
P_DAMB
T_c = 25°C
4.5 W
R_thJC
R_thJHS
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
0.16 C/W
0.23 C/W
Test Conditions
Characteristic Values
T_J = 25°C unless otherwise specified
min. typ. max.
V_GS = 0 V, I_D = 3 ma
1000
V
V_DS = V_GS, I_D = 250µA
2.5 3.1
5.5 V
V_GS = ±20 V_DC, V_DS = 0
±100 nA
V_DS = 0.8 V_DSS T_J = 25°C
V_GS = 0
T_J = 125°C
50 µA
1 mA
V_GS = 15 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
1.2 Ω
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q_g process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
g_fs
V_DS = 20 V, I_D = 0.5I_D25, pulse test
T_J
T_JM
T_stg
4
6
S Advantages
-55
+150 °C
• Optimized for RF and high speed
switching at frequencies to 50MHz
150
°C ^{• Easy to mount—no insulators needed}
-55
+150 °C ^{• High power density}
T_L
1.6mm (0.063 in) from case for 10 s
300
°C
Weight
3
g