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| DE275-501N16 Datasheet, PDF (2/3 Pages) IXYS Corporation – RF Power MOSFET | |||
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Directed Energy, Inc.
An IXYS Company
DE275-501N16A
RF Power MOSFET
Symbol Test Conditions
RG
Ciss
Coss
Crss
Td(on)
Ton
Td(off)
Toff
Qg(on)
Qgs
Qgd
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 ⦠(External)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ. max.
0.3
â¦
1800
pF
150
pF
45
pF
3
ns
2
ns
4
ns
5
ns
50
nC
20
nC
30
nC
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions
min.
typ. max.
IS
ISM
VSD
Trr
QRM
IRM
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t ⤠300 µs, duty cycle ⤠2%
IF = IS, -di/dt = 100A/µs,
VR = 100V
6A
48 A
1.5 V
200
ns
0.6
µC
4
A
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
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