DE275-501N16 Datasheet, PDF (1/3 Pages) IXYS Corporation – RF Power MOSFET

Directed Energy, Inc.
An IXYS Company
N-Channel Enhancement Mode
Avalanche Rated
Low Q_g and R_g
High dv/dt
Nanosecond Switching
DE275-501N16A
RF Power MOSFET
Preliminary Data Sheet
V_DSS
=
I_D25
=
R_DS(on) =
500 V
16 A
.5 Ω
Symbol Test Conditions
Maximum Ratings
P_DHS = 375 W
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_DHS
P_DAMB
R_thJHS
T_J
T_JM
T_stg
T_L
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
T_J = 25°C to 150°C
500
V
T_J = 25°C to 150°C; R_GS = 1 MΩ
500
V
Continuous
±20 V
Transient
±30 V
T_c = 25°C
16
A
T_c = 25°C, pulse width limited by T_JM
98
A
T_c = 25°C
T_c = 25°C
16
A
20
mJ ^GATE
DRAIN
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
T_c = 25°C
Derate 3.0W/°C above 25°C
T_c = 25°C
1.6mm (0.063 in) from case for 10 s
5 V/ns
>200 V/ns
375 W
3.0 W
0.33 K/W
-55…+150 °C
150 °C
-55…+150 °C
300 °C
2
g
Test Conditions
Characteristic Values
T_J = 25°C unless otherwise specified
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q_g process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
V_GS = 0 V, I_D = 3 ma
V_DS = V_GS, I_D = 4 ma
V_GS = ±20 V_DC, V_DS = 0
min.
500
2.5
typ.
max.
V
5.5 V
±100 nA
Advantages
• Optimized for RF and high speed
switching at frequencies to 100MHz
• Easy to mount—no insulators needed
• High power density
V_DS = 0.8 V_DSS T_J = 25°C
V_GS = 0
T_J = 125°C
50 µA
1 mA
V_GS = 15 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
.5 Ω
V_DS = 15 V, I_D = 0.5I_D25, pulse test
2
6
S