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| DE275-101N30A Datasheet, PDF (2/5 Pages) IXYS Corporation – RF Power MOSFET | |||
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Symbol
Test Conditions
RG
Ciss
Coss
Crss
Cstray
Td(on)
Ton
Td(off)
Toff
Qg(on)
Qgs
Qgd
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Back Metal to any Pin
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 ⦠(External)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
DE275-101N30A
RF Power MOSFET
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
2500
5
â¦
pF
700
pF
145
pF
16
pF
5
ns
5
ns
8
ns
8
ns
94
nC
11
nC
42
nC
Source-Drain Diode
Symbol
IS
ISM
VSD
Trr
Test Conditions
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t ⤠300 µs, duty cycle ⤠2%
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
600
max.
30.0
A
240
A
2.5
V
ns
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
For detailed device mounting and installation instructions, see the âDevice Installation & Mounting Instructionsâ technical note on the IX-
YSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
5,034,796
5,049,961
5,063,307
5,187,117
5,381,025
5,640,045
4,931,844
5,237,481
5,017,508
5,486,715
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