DE275-101N30A Datasheet, PDF (1/5 Pages) IXYS Corporation – RF Power MOSFET

DE275-101N30A
RF Power MOSFET
N-Channel Enhancement Mode
Low Q_g and R_g
High dv/dt
Nanosecond Switching
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_c = 25°C
T_c = 25°C, pulse width limited by T_JM
T_c = 25°C
T_c = 25°C
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
Maximum Ratings
100
V
100
V
±20
V
±30
V
30.0
A
240
A
TBD
A
TBD mJ
5.5 V/ns
>200 V/ns
V_DSS = 100 V
I_D25
= 30.0 A
R_DS(on) ≤ _{0.06 Ω}
P_DC
= 550 W
P_DC
P_DHS
P_DAMB
R_thJC
R_thJHS
T_c = 25°C
Derate 4.4W/°C above 25°C
T_c = 25°C
550 W
270 W
3.5 W
0.25 C/W
0.53 C/W
GATE
SG1 SG2
DRAIN
SD1 SD2
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
T_J
T_JM
T_stg
T_L
Weight
Test Conditions
Characteristic Values
T_J = 25°C unless otherwise specified
min. typ.
max.
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
V_GS = 0 V, I_D = 3 ma
100
V ^{− Increased temperature and power}
cycling capability
V_DS = V_GS, I_D = 250 µa
2
2.5
4
V • IXYS advanced low Qg process
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 V_DSS T_J = 25°C
V_GS = 0
T_J = 125°C
±100
25
250
nA
• Low gate charge and capacitances
− easier to drive
µA − faster switching
µA • Low RDS(on)
V_GS = 15 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
0.06
• Very low insertion inductance (<2nH)
Ω _{• No beryllium oxide (BeO) or other}
hazardous materials
V_DS = 15 V, I_D = 0.5I_D25, pulse test
9.7
S
Advantages
-55
+175
°C _{• Optimized for RF and high speed}
175
°C
switching
• Easy to mount—no insulators needed
-55
+175
°C ^{• High power density}
1.6mm(0.063 in) from case for 10 s
300
°C
2
g