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| DE150-102N02A Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET | |||
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DE150-102N02A
RF Power MOSFET
Symbol Test Conditions
RG
Ciss
Coss
Crss
CStray
Td(on)
Ton
Td(off)
Toff
Qg(on)
Qgs
Qgd
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Back Metal to any Pin
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 ⦠(External)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ. max.
5â¦
500
pF
150
pF
3
pF
16
pF
4
ns
4
ns
4
ns
4
ns
23
nC
4.5
nC
14
nC
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ. max.
IS
ISM
VSD
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t ⤠300 µs, duty cycle ⤠2%
1.5 A
12 A
1.8 V
Trr
710
ns
For detailed device mounting and installation instructions, see the âDE-
Series MOSFET Mounting Instructionsâ technical note on IXYS RFâs web
site at www.ixysrf.com/Technical_Support/App_notes.html
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
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