DE150-102N02A Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET

DE150-102N02A
RF Power MOSFET
N-Channel Enhancement Mode
Low Q_g and R_g
High dv/dt
Nanosecond Switching
V_DSS
I_D25
= 1000 V
=
2A
Symbol Test Conditions
Maximum Ratings
R_DS(on) = 7.8 Ω
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_c = 25°C
T_c = 25°C, pulse width limited by T_JM
T_c = 25°C
T_c = 25°C
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
1000 V
1000 V
±20 V
±30 V
2A
12 A
1.5 A
6 mJ
3 V/ns
>200 V/ns
P_DC
= 200W
P_DC
P_DHS
P_DAMB
R_thJC
R_thJHS
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
T_J
T_JM
T_stg
T_L
Weight
200 W
DRAIN
T_c = 25°C
Derate .7W/°C above 25°C
T_c = 25°C
105
W ^GATE
3.5 W
0.71 C/W
1.41 C/W
Test Conditions
Characteristic Values
T_J = 25°C unless otherwise specified
min. typ. max.
V_GS = 0 V, I_D = 3 ma
1000
V
V_DS = V_GS, I_D = 4 ma
2.5
4.5 V
V_GS = ±20 V_DC, V_DS = 0
±100 nA
V_DS = 0.8 V_DSS T_J = 25°C
V_GS = 0
T_J = 125°C
50 µA
500 _µA
V_GS = 15 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
7.8 Ω
V_DS = 15 V, I_D = 0.5I_D25, pulse test
0.8
2
S
-55
+175 °C
175
°C
-55
+175 °C
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q_g process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 30MHz
• Easy to mount—no insulators needed
• High power density
1.6mm (0.063 in) from case for 10 s
300
°C
2
g