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| DE150-101N09A Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – RF Power MOSFET | |||
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Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
RG
Ciss
Coss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Crss
Cstray
Back Metal to any Pin
Td(on)
Ton
Td(off)
Toff
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 ⦠(External)
Qg(on)
Qgs
Qgd
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25 , Ig = 3 ma
DE150-101N09A
RF Power MOSFET
Characteristic Values
min.
typ.
max.
5
â¦
700
pF
200
pF
30
pF
16
pF
4
ns
4
ns
4
ns
4
ns
22
nC
3.4
nC
9.1
nC
Source-Drain Diode
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
IS
ISM
VSD
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t ⤠300 µs, duty cycle ⤠2%
Trr
Characteristic Values
min.
typ.
300
max.
9.0
A
54
A
1.5
V
ns
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
For detailed device mounting and installation instructions, see the âDevice Installation & Mounting Instructionsâ technical note on the
IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
5,034,796
5,049,961
5,063,307
5,187,117
5,381,025
5,640,045
4,931,844
5,237,481
5,017,508
5,486,715
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