CPC3701_12 Datasheet, PDF (2/4 Pages) IXYS Corporation – 60V, Depletion-Mode, N-Channel Vertical DMOS FET

INTEGRATED CIRCUITS DIVISION
CPC3701
Absolute Maximum Ratings @ 25ºC
Parameter
Ratings Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Pulsed Drain Current
Total Package Dissipation ¹
60
V_P
±15
V_P
1
A
1.1
W
Operational Temperature
-55 to +125 ºC
Storage Temperature
-55 to +125 ºC
1 _{Mounted on 1"x1" FR4 board.}
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Off Voltage
Change in V_GS(off) with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
Saturated Drain-to-Source Current
Static Drain-to-Source On-State Resistance
Change in R_DS(on) with Temperature
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Voltage Drop
Thermal Resistance (Junction to Ambient)
Symbol
V_(BR)DSX
V_GS(off)
dV_GS(off) /dT
I_GSS
I_D(off)
I_DSS
R_DS(on)
dR_DS(on) /dT
t_d(on)
t_r
t_d(off)
t_f
V_SD
R_JA
Conditions
V_GS= -5V, I_D=100µA
V_DS= 5V, I_D=1A
V_DS= 5V, I_D=1A
V_GS=±15V, V_DS=0V
V_GS= -5V, V_DS=60V
V_GS= -5V, V_DS=40V, T_A=125ºC
V_GS= 0V, V_DS=15V
V_GS= 0V, I_D=300mA
V_DS= 25V
I_D= 300mA
V_GS= 0V to -10V
R_gen= 50
V_GS= -5V, I_SD=300mA
-
Min Typ Max Units
60
-
-
V
-0.8
-
-2.9
V
-
-
4.5 mV/ºC
-
-
100 nA
-
-
1
µA
-
-
1
mA
600
-
-
mA
-
-
1

-
-
1.1 %/ºC
-
70
-
40
-
ns
-
50
-
150
-
0.6 1.8
V
-
90
- ºC/W
Switching Waveform & Test Circuit
0V
INPUT
-10V
10%
V_DS
OUTPUT
0V
ton
td(on)
tf
90%
10%
90%
toff
td(off)
tr
90%
10%
PULSE
GENERATOR
R_gen
INPUT
V_DD
R_L
OUTPUT
D.U.T.
2
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