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| CPC3701_12 Datasheet, PDF (1/4 Pages) IXYS Corporation – 60V, Depletion-Mode, N-Channel Vertical DMOS FET | |||
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INTEGRATED CIRCUITS DIVISION
V(BR)DSX /
V(BR)DGX
60V
RDS(on)
(max)
1ï
IDSS (min)
600mA
Package
SOT-89
Features
⢠Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
⢠Low On-Resistance: 1ï max. at 25ºC
⢠High Input Impedance
⢠Low VGS(off) Voltage: -0.8 to -2.9V
⢠Small Package Size SOT-89
Applications
⢠Ignition Modules
⢠Normally-On Switches
⢠Solid State Relays
⢠Converters
⢠Security
⢠Power Supplies
Package Pinout (SOT-89)
D
G
D
S
CPC3701
60V, Depletion-Mode, N-Channel
Vertical DMOS FET
Description
The CPC3701 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Divisionâs proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high-power applications. The
CPC3701 is a highly reliable FET device that has
been used extensively in our Solid State Relays for
industrial and security applications.
The CPC3701 has a minimum breakdown voltage of
60V, and is available in the SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3701C
CPC3701CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Cut-Tape, Available in Quantities of 200, 300,
400, 500, and 600
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
D
G
S
Pb
e3
DS-CPC3701-R03
www.ixysic.com
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