GMM3X120-0075X2 Datasheet, PDF (1/4 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GMM 3x120-0075X2
V_DSS = 75 V
I_D25
= 110 A
R = _{DSon typ.} 4.0 mW
L1+
L2+
L3+
G1
G3
G5
S1
S3
S5
L1
L2
L3
G2
G4
G6
S2
S4
S6
L1-
L2-
L3-
MOSFETs
Symbol Conditions
V_DSS
V_GS
T_VJ = 25°C to 150°C
I_D25
T_C = 25°C
I_D90
T_C = 90°C
I_F25
T_C = 25°C (diode)
I_F90
T_C = 90°C (diode)
Maximum Ratings
75 V
± 20
V
110 A
85 A
110 A
80 A
Symbol Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
R 1)
DSon
V_GS(th)
I_DSS
I_GSS
on chip level at
V_GS = 10 V
V_DS = 20 V; I_D = 1 mA
V_DS = V_DSS; V_GS = 0 V
V_GS = ± 20 V; V_DS = 0 V
T_VJ = 25°C
T_VJ = 125°C
T_VJ = 25°C
T_VJ = 125°C
Q_g
Q_gs
V_GS = 10 V; V_DS = 36 V; I_D = 25 A
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_recoff
inductive load
V_GS = 10 V; V_DS = 30 V
I_D = 80 A; R_G = 39 Ω;
T_J = 125°C
R_thJC
R_thJH
with heat transfer paste (IXYS test setup)
1) _{VDS = ID·(RDS(on) + 2RPin to ) Chip}
4.0
7.2
2.0
50
115
30
30
130
100
500
100
0.20
0.50
0.01
1.3
4.9 mW
8.4 mW
4.0 V
1 µA
µA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low R_DSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307
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