DEIC515 Datasheet, PDF (1/9 Pages) IXYS Corporation – 15 Ampere Low-Side Ultrafast RF MOSFET Driver

DEIC515
15 Ampere Low-Side Ultrafast RF MOSFET Driver
Features
• Built using the advantages and compatibility of
CMOS and IXYS HDMOSTM processes
• Latch-Up Protected
• High Peak Output Current: 15A Peak
• Wide Operating Range: 8V to 30V
• Rise And Fall Times of <4ns
• Minimum Pulse Width Of 8ns
• High Capacitive Load Drive Capability: 2nF in <4ns
• Matched Rise And Fall Times
• 18ns Input To Output Delay Time
• Low Output Impedance
• Low Quiescent Supply Current
Applications
• Driving RF MOSFETs
• Class D or E Switching Amplifier Drivers
• Multi MHz Switch Mode Power Supplies (SMPS)
• Pulse Generators
• Acoustic Transducer Drivers
• Pulsed Laser Diode Drivers
• DC to DC Converters
• Pulse Transformer Driver
Description
The DEIC515 is a CMOS high speed high current gate
driver specifically designed to drive MOSFETs in Class
D, E, and HF, RF applications at up to 45MHz, as well as
other applications requiring ultrafast rise and fall times or
short minimum pulse widths. The DEIC515 can source
and sink 15A of peak current while producing voltage
rise and fall times of less than 4ns, and minimum pulse
widths of 8ns. The input of the driver is fully immune to
latch up over the entire operating range. Its features and
wide safety margin in operating voltage and power make
the DEIC515 unmatched in performance and value.
The DEIC515 is packaged in DEI's low inductance RF
package incorporating DEI's patented (1) RF layout
techniques to minimize stray lead inductances for
optimum switching performance. The DEIC515 is a
surface-mount device. (1) DEI U.S. Patent #4,891,686
Figure 1 - DEIC515 Functional Diagram
VCC IN
VCC
IN
OUT
IN GND
DGND