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IS61WV102416ALL_12 Datasheet, PDF (9/20 Pages) Integrated Silicon Solution, Inc – 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |||
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IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-8
Symbol Parameter Min. Max.
-10
Min. Max. Unit
trc
Read Cycle Time
8â
10 â
ns
taa
Address Access Time
â8
â 10
ns
toha
Output Hold Time
2.5 â
2.5 â
ns
tace
CE Access Time
â8
â 10
ns
tdoe
OE Access Time
â 5.5
â 6.5
ns
thzoe(2) OE to High-Z Output
â3
â4
ns
tlzoe(2)
OE to Low-Z Output
0â
0â
ns
thzce(2
CE to High-Z Output
03
04
ns
tlzce(2)
CE to Low-Z Output
3â
3â
ns
tba
LB, UB Access Time
â 5.5
â 6.5
ns
thzb(2)
tlzb(2)
LB, UB to High-Z Output
LB, UB to Low-Z Output
03
0â
03
ns
0â
ns
tpu
Power Up Time
0â
0â
ns
tpd
Power Down Time
â8
â 10
ns
Notes:
1.â Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V
and output loading specified in Figure 1.
2.â Tested with the load in Figure 2.Transition is measured ±500 mV from steady-state voltage.
Integrated Silicon Solution, Inc. â www.issi.com â 1-800-379-4774
9
Rev.â F
05/09/12
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