IS61WV102416ALL_12 Datasheet, PDF (8/20 Pages) Integrated Silicon Solution, Inc – 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
-8
Symbol Parameter
Test Conditions Min. Max.
Icc
Vdd Dynamic Operating Vdd = Max.,
Com. — 110
Supply Current
Iout = 0 mA, f = fmax
Ind. — 115
Vin = 0.4V or Vdd –0.3V Auto. — —
typ.⁽²⁾
Icc1 Operating
Supply Current
Vdd = Max.,
Com. — 85
Iout = 0 mA, f = 0
Ind. — 90
Vin = 0.4V or Vdd –0.3V Auto. — —
Isb1
TTL Standby Current Vdd = Max.,
(TTL Inputs)
Vin = Vih or Vil
CE ≥ Vih, f = 0
Com. — 30
Ind. — 35
Auto. — —
Isb2
CMOS Standby
Vdd = Max.,
Com. — 20
Current (CMOS Inputs) CE ≥ Vdd – 0.2V,
Ind. — 25
Vin ≥ Vdd – 0.2V, or
Auto. — —
Vin ≤ 0.2V, f = 0
typ.⁽²⁾
-10
Min. Max.
— 90
— 95
— 140
60
— 85
— 90
— 110
— 30
— 35
— 70
— 20
— 25
— 60
4
-20
Min. Max. Unit
— 50 mA
— 60
— 100
— 45 mA
— 55
— 90
— 30 mA
— 35
— 70
— 20 mA
— 25
— 60
Note:
1.At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vdd = 3.0V, Ta = 25^oC and not 100% tested.
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev.  F
05/09/12