IS61LV25616L Datasheet, PDF (9/11 Pages) Integrated Silicon Solution, Inc – 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV25616L
ISSI ^®
AC WAVEFORMS
WRITE CYCLE NO. 2 (WE Controlled. OE is HIGH During Write Cycle) ^(1,2)
1
t WC
ADDRESS
VALID ADDRESS
t HA
2
OE
CE ^LOW
3
t AW
t PWE1
WE
t SA
t PBW
4
UB, LB
t HZWE
t LZWE
DOUT
DATA UNDEFINED
HIGH-Z
5
t SD
t HD
DIN
DATAIN VALID
6
UB_CEWR2.eps
WRITE CYCLE NO. 3 (WE Controlled. OE is LOW During Write Cycle) ⁽¹⁾
ADDRESS
OE ^LOW
t WC
VALID ADDRESS
t HA
CE _LOW
WE
t SA
UB, LB
DOUT
DATA UNDEFINED
DIN
t AW
t PWE2
t PBW
t HZWE
HIGH-Z
t LZWE
t SD
t HD
DATAIN VALID
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
06/28/02
UB_CEWR3.eps
7
8
9
10
11
12
9