IS61NF25618-8.5TQ Datasheet, PDF (8/20 Pages) Integrated Silicon Solution, Inc – 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM

IS61NF12832 IS61NF12836 IS61NF25618
IS61NLF12832 IS61NLF12836 IS61NLF25618
ISSI ^®
INTERLEAVED BURST ADDRESS TABLE (MODE = VCC)
External Address
A1 A0
00
01
10
11
1st Burst Address
A1 A0
01
00
11
10
2nd Burst Address
A1 A0
10
11
00
01
3rd Burst Address
A1 A0
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = GND)
0,0
A1', A0' = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
TSTG
PD
Storage Temperature
Power Dissipation
–65 to +150
°C
1.6
W
IOUT
Output Current (per I/O)
100
mA
VIN, VOUT Voltage Relative to GND for I/O Pins
VIN
Voltage Relative to GND for
for Address and Control Inputs
–0.5 to VCCQ + 0.3 V
–0.3 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this specifi-
cation is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or
electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
11/11/02