IS65WV12816ALL Datasheet, PDF (7/19 Pages) Integrated Silicon Solution, Inc – 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS65WV12816ALL, IS65WV12816BLL
ISSI ^®
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
Parameter
tRC
Read Cycle Time
tAA
Address Access Time
tOHA
Output Hold Time
tACS1/tACS2
CS1/CS2 Access Time
tDOE
OE Access Time
tHZOE⁽²⁾
OE to High-Z Output
tLZOE⁽²⁾
OE to Low-Z Output
t t HZCS1/ HZCS2⁽²⁾ CS1/CS2 to High-Z Output
t t LZCS1/ LZCS2⁽²⁾ CS1/CS2 to Low-Z Output
tBA
LB, UB Access Time
tHZB
LB, UB to High-Z Output
tLZB
LB, UB to Low-Z Output
-55 ns
Min. Max.
55
—
—
55
10
—
—
55
—
25
—
20
5
—
0
20
10
—
—
55
0
20
0
—
-70 ns
Min. Max.
70
—
—
70
10
—
—
70
—
35
—
25
5
—
0
25
10
—
—
70
0
25
0
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4 to 1.4V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
7
Rev. 00E
06/08/06