IS65WV12816ALL Datasheet, PDF (5/19 Pages) Integrated Silicon Solution, Inc – 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS65WV12816ALL, IS65WV12816BLL
ISSI ^®
IS65WV12816ALL, POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
Options
ICC
VddDynamicOperating VDD=Max.,
Supply Current
IOUT = 0 mA, f = fMAX
ICC1
Operating Supply
VDD = Max.,
Current
IOUT = 0 mA, f = 0
ISB1
TTL Standby Current
VDD = Max.,
(TTL Inputs)
VIN = VIH or VIL
CS1 = VIH , CS2 = VIL,
f = 1 MHZ
OR
A, A1
A2, A3
A, A1
A2, A3
A, A1
A2, A3
ULB Control
VDD = Max., VIN = VIH or VIL
CS1 = VIL, f = 0, UB = VIH, LB = VIH
ISB2
CMOS Standby
VDD = Max.,
Current(CMOSInputs) CS1≥ VDD–0.2V,
CS2 ≤ 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0 OR
A, A1
A2
A3
ULB Control
VDD = Max., CS1 = VIL, CS2=VIH
VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V
Max. Unit
-70 ns
15 mA
20
7
mA
7
0.6 mA
0.6
15
µA
20
50
IS65WV12816BLL, POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
ICC
VddDynamicOperating VDD=Max.,
Supply Current
IOUT = 0 mA, f = fMAX
ICC1
Operating Supply
VDD = Max.,
Current
IOUT = 0 mA, f = 0
ISB1
TTL Standby Current
VDD = Max.,
(TTL Inputs)
VIN = VIH or VIL
CS1 = VIH , CS2 = VIL,
f = 1 MHZ
OR
Options
A, A1
A2, A3
A, A1
A2, A3
A, A1
A2, A3
Max. Max. Unit
-55ns -70ns
25
20
mA
30
25
7
7
mA
7
7
0.6 0.6 mA
0.6 0.6
ULB Control
VDD = Max., VIN = VIH or VIL
CS1 = VIL, f = 0, UB = VIH, LB = VIH
ISB2
CMOS Standby
VDD = Max.,
Current(CMOSInputs) CS1≥ VDD–0.2V,
CS2 ≤ 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
OR
A, A1
A2
A3
15
15
µA
25
25
65 65
ULB Control
VDD = Max., CS1 = VIL, CS2=VIH
VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. 00E
06/08/06