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IS62WV12816ALL Datasheet, PDF (7/17 Pages) Integrated Silicon Solution, Inc – 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM | |||
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IS62WV12816ALL, IS62WV12816BLL
ISSI ®
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
tRC
tAA
tOHA
tACS1/tACS2
tDOE
tHZOE(2)
tLZOE(2)
t t HZCS1/ HZCS2(2)
t t LZCS1/ LZCS2(2)
tBA
tHZB
tLZB
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CS1/CS2 Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CS1/CS2 to High-Z Output
CS1/CS2 to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
45 ns
Min. Max.
45
â
â
45
10
â
â
45
â
20
â
15
5
â
0
15
10
â
â
45
0
15
0
â
55 ns
Min. Max.
55
â
â
55
10
â
â
55
â
25
â
20
5
â
0
20
10
â
â
55
0
20
0
â
70 ns
Min. Max.
70
â
â
70
10
â
â
70
â
35
â
25
5
â
0
25
10
â
â
70
0
25
0
â
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4 to 1.4V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. â www.issi.com â 1-800-379-4774
7
Rev. E
06/08/05
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