IS62WV12816ALL Datasheet, PDF (5/17 Pages) Integrated Silicon Solution, Inc – 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

IS62WV12816ALL, IS62WV12816BLL
ISSI ^®
IS62WV12816ALL, POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
ICC
VDDDynamicOperating VDD=Max.,
Com.
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
ICC1
Operating Supply
VDD = Max.,
Com.
Current
IOUT = 0 mA, f = 0
Ind.
ISB1
TTL Standby Current
VDD = Max.,
Com.
(TTL Inputs)
VIN = VIH or VIL
Ind.
CS1 = VIH , CS2 = VIL,
f = 1 MHZ
OR
ULB Control
VDD = Max., VIN = VIH or VIL
CS1 = VIL, f = 0, UB = VIH, LB = VIH
ISB2
CMOS Standby
VDD = Max.,
Com.
Current(CMOSInputs) CS1≥ VDD–0.2V,
Ind.
CS2 ≤ 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
OR
ULB Control
VDD = Max., CS1 = VIL, CS2=VIH
VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V
Max. Unit
70
15
mA
20
3
mA
3
0.3 mA
0.3
5
µA
10
IS62WV12816BLL, POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
ICC
VDDDynamicOperating VDD=Max.,
Com.
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
typ.⁽²⁾
ICC1
Operating Supply
Current
VDD = Max.,
IOUT = 0 mA, f = 0
Com.
Ind.
ISB1
TTL Standby Current
(TTL Inputs)
VDD = Max.,
Com.
VIN = VIH or VIL
Ind.
CS1 = VIH , CS2 = VIL,
f = 1 MHZ
OR
Max. Max.
Unit
45
55
35
25
mA
40
30
25
20
3
3
mA
3
3
0.3 0.3
mA
0.3 0.3
ULB Control
VDD = Max., VIN = VIH or VIL
CS1 = VIL, f = 0, UB = VIH, LB = VIH
ISB2
CMOS Standby
VDD = Max.,
Com.
Current(CMOSInputs) CS1≥ VDD–0.2V,
Ind.
CS2 ≤ 0.2V,
typ.⁽²⁾
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
OR
10
10
µA
10
10
3
3
ULB Control
VDD = Max., CS1 = VIL, CS2=VIH
VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, TA = 25^oC and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. E
06/08/05