IS61WV20488ALL Datasheet, PDF (7/20 Pages) Integrated Silicon Solution, Inc – 2M x 8 HIGH-SPEED CMOS STATIC RAM

IS61WV20488ALL
IS61WV20488BLL
IS64WV20488BLL
ISSI ^®
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
ICC
VDD Dynamic Operating VDD = Max.,
Supply Current
IOUT = 0 mA, f = fMAX
ICC1
ISB1
ISB2
Operating
Supply Current
VDD = Max.,
IOUT = 0 mA, f = 0
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
VDD = Max.,
CE ≥ VDD – 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
Auto.
typ.⁽²⁾
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.⁽²⁾
-8
Min. Max.
— 120
— 125
——
— 35
— 35
——
— 30
— 35
——
— 20
— 25
——
-10
Min. Max.
— 95
— 100
— 140
60
— 30
— 40
— 60
— 30
— 35
— 70
— 20
— 25
— 70
4
-20
Min. Max. Unit
— 90 mA
— 100
— 140
— 30 mA
— 40
— 70
— 30
mA
— 35
— 70
— 15
mA
— 20
— 70
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, TA = 25^oC and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
7
Rev. 00C
01/09/06