IS62WV6416ALL Datasheet, PDF (6/17 Pages) Integrated Silicon Solution, Inc – 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62WV6416ALL, IS62WV6416BLL
ISSI ^®
IS62WV6416ALL, POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
ICC
VDDDynamicOperating VDD=Max.,
Com.
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
typ.⁽¹⁾
ICC1
Operating Supply
Current
VDD = Max.,
IOUT = 0 mA, f = 0
Com.
Ind.
ISB1
TTL Standby Current
VDD = Max.,
Com.
(TTL Inputs)
VIN = VIH or VIL
Ind.
CS1 = VIH, CS2 = VIL,
f = 1 MHZ
OR
Max.
Unit
55
10
mA
10
6
5
mA
5
1.2
mA
1.2
ULB Control
VDD = Max., VIN = VIH or VIL
CS1 = VIL, f = 0, UB = VIH, LB = VIH
ISB2
CMOS Standby
VDD = Max.,
Com.
Current(CMOSInputs) CS1≥ VDD–0.2V,
Ind.
CS2 ≤ 0.2V,
typ.⁽¹⁾
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
OR
10
µA
10
4
ULB Control
VDD = Max., CS1 = VIL, CS2=VIH
VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V
Note:
1. Typical values are measured at VDD=1.8V, TA=25^oC. Not 100% tested.
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
06/03/05