IS62WV6416ALL Datasheet, PDF (4/17 Pages) Integrated Silicon Solution, Inc – 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62WV6416ALL, IS62WV6416BLL
ISSI ^®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VDD
VOH
Output HIGH Voltage
IOH = -0.1 mA
IOH = -1 mA
1.7-2.2V
2.5-3.6V
VOL
Output LOW Voltage
IOL = 0.1 mA
IOL = 2.1 mA
1.7-2.2V
2.5-3.6V
VIH
Input HIGH Voltage
1.7-2.2V
2.5-3.6V
VIL(1)
Input LOW Voltage
1.7-2.2V
2.5-3.6V
ILI
Input Leakage
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Notes:
1. VIL (min.) = –1.0V for pulse width less than 10 ns.
Min.
Max.
Unit
1.4
—
V
2.2
—
V
—
0.2
V
—
0.4
V
1.4
VDD + 0.2
V
2.2
VDD + 0.3
V
–0.2
0.4
V
–0.2
0.6
V
–1
1
µA
–1
1
µA
CAPACITANCE⁽¹⁾
Symbol Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
8
pF
COUT
Input/Output Capacitance
VOUT = 0V
10
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
06/03/05