IS62C51216AL Datasheet, PDF (6/15 Pages) Integrated Silicon Solution, Inc – 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62C51216AL, IS65C51216AL
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
-45 ns
-55 ns
Symbol Parameter
Test Conditions
Min. Max.
Min. Max.
Unit
Icc
Vdd Dynamic Operating Vdd = Max., CE = Vil
Com.
— 25

mA

Supply Current
Iout = 0 mA, f = fmax
Ind.
— 25

Vin = Vih or Vil
Auto.
— 40

typ.⁽²⁾
13
12
Icc1 Average operating

Current

CE = Vil,
Vin = Vih or Vil,
I I/O= 0 mA
Com.
— 10

mA
Ind.
— 10
Auto.
— 20
Isb1 TTL Standby Current Vdd = Max.,
Com.
— 1
mA

(TTL Inputs)
Vin = Vih or Vil, CE ≥ Vih,
Ind.
— 1.5
f=0
Auto.
—2
Isb2 CMOS Standby
Vdd = Max.,
Current (CMOS Inputs) CE ≥ Vdd – 0.2V,

Vin ≥ Vdd – 0.2V,

or Vin ≤ Vss + 0.2V, f = 0
Com.
Ind.
Auto.
typ.⁽²⁾
— 40
µA
— 60
— 180
15
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.Typical Values are measured at Vcc = 5V, Ta = 25^oC and not 100% tested.
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev.  A
03/18/09