IS93C66-3 Datasheet, PDF (5/10 Pages) Integrated Silicon Solution, Inc – 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM

IS93C66-3
ISSI ^®
DC ELECTRICAL CHARACTERISTICS
TA = 0°C to +70°C for IS93C66-3 and –40°C to +85°C for IS93C66-3I.
Symbol
VOL
VOL1
VOH
VOH1
VIH
Parameter
Output LOW Voltage
Output LOW Voltage
Output HIGH Voltage
Output HIGH Voltage
Input HIGH Voltage
VIL
Input LOW Voltage
ILI
Input Leakage
ILO
Output Leakage
Test Conditions
IOL = 10 µA CMOS
IOL = 2.1 mA TTL
IOH = –10 µA CMOS
IOH = –400 µA TTL
VIN = 0V to VCC (CS, SK, DIN)
VOUT = 0V to VCC, CS = 0V
Vcc
2.7V to 3.3V
4.5V to 5.5V
2.7V to 3.3V
4.5V to 5.5V
2.7V to 3.3V
4.5V to 5.5V
2.7V to 3.3V
4.5V to 5.5V
Min.
—
—
VCC – 0.2
2.4
2.4
2
–0.1
–0.1
1
1
Max.
0.2
0.4
—
—
VCC
VCC
0.6
0.8
1
1
Unit
V
V
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS
TA = 0°C to +70°C for IS93C66-3 and –40°C to +85°C for IS93C66-3I.
Symbol
ICC
ICC
ISB
Parameter
Vcc Operating
Supply Current
Vcc Operating
Supply Current
Standby Current
Test Conditions
CS = VIH, SK = 1 MHz
CMOS Input Levels
CS = VIH, SK = 1 MHz
CMOS Input Levels
CS = DIN = SK = 0V
Vcc
2.7V to 3.3V
4.5V to 5.5V
2.7V to 3.3V
4.5V to 5.5V
IS93C66-3
Min. Typ. Max.
— 0.5 2
IS93C66-3I
Min. Typ. Max. Unit
— 0.5 2 mA
—4 6
— 4 6 mA
— 2 10
— 10 50
— 2 10 µA
— 10 50
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. G
04/26/01