IS93C66-3 Datasheet, PDF (4/10 Pages) Integrated Silicon Solution, Inc – 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM

IS93C66-3
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
VGND
TBIAS
TBIAS
TSTG
Parameter
Voltage with Respect to GND
Temperature Under Bias (IS93C46-3)
Temperature Under Bias (IS93C46-3I)
Storage Temperature
Value
Unit
–0.3 tp +6.5
V
0 to +70
°C
–40 to +85
°C
–65 to +125
°C
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VCC
2.7V to 6.0V
2.7V to 6.0V
ISSI ^®
CAPACITANCE
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
5
pF
5
pF
FIGURE 1. AC TEST CONDITIONS
+2.08V
DOUT
Vcc = 5.0V
800Ω
100 pF
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. G
04/26/01