IS62WV25616ALL Datasheet, PDF (5/14 Pages) Integrated Silicon Solution, Inc – 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

IS62WV25616ALL, IS62WV25616BLL
CAPACITANCE⁽¹⁾
Symbol Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
8
pF
COUT
Input/Output Capacitance
VOUT = 0V
10
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
IS62WV25616ALL
(Unit)
0.4V to VDD-0.2V
5 ns
VREF
See Figures 1 and 2
IS62WV25616BLL
(Unit)
0.4V to VDD-0.3V
5ns
VREF
See Figures 1 and 2
ISSI ^®
R1(Ω)
R2(Ω)
VREF
VTM
IS62WV25616ALL
1.65V-2.2V
3070
3150
0.9V
1.8V
IS62WV25616BLL
2.5V - 3.6V
3070
3150
1.5V
2.8V
AC TEST LOADS
R1
VTM
OUTPUT
Figure 1
30 pF
R2
Including
jig and
scope
R1
VTM
OUTPUT
5 pF
R2
Including
jig and
scope
Figure 2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. C
05/02/05