IS62WV25616ALL Datasheet, PDF (4/14 Pages) Integrated Silicon Solution, Inc – 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

IS62WV25616ALL, IS62WV25616BLL
ISSI ^®
IS62WV25616ALL, POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
ICC
VDDDynamicOperating VDD=Max.,
Supply Current
IOUT = 0 mA, f = fMAX
ICC1
Operating Supply
Current
VDD = Max., CS1 = 0.2V
WE = VDD-0.2V
f=1MHZ
ISB1
TTL Standby Current
VDD = Max.,
(TTL Inputs)
VIN = VIH or VIL
CS1 = VIH , f = 1 MHZ
Com.
Ind.
Com.
Ind.
Com.
Ind.
OR
ULB Control
VDD = Max., VIN = VIH or VIL
CS1 = VIL, f = 0, UB = VIH, LB = VIH
ISB2
CMOS Standby
VDD = Max.,
Current(CMOSInputs) CS1≥ VDD–0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
OR
ULB Control
VDD = Max., CS1 = VIL,
VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V
Max.
Unit
70
25
mA
30
10
mA
10
0.35
mA
0.35
15
µA
15
IS62WV25616BLL, POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
Max. Max.
Unit
55
70
ICC
VDDDynamicOperating VDD=Max.,
Com.
40
35
mA
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
45
40
ICC1
Operating Supply
VDD = Max., CS1 = 0.2V
Com.
15
15
mA
Current
WE = VDD-0.2V
Ind.
15
15
f=1MHZ
ISB1
TTL Standby Current
VDD = Max.,
Com.
0.35 0.35
mA
(TTL Inputs)
VIN = VIH or VIL
Ind.
0.35 0.35
CS1 = VIH, f = 1 MHZ
OR
ULB Control
VDD = Max., VIN = VIH or VIL
CS1 = VIL, f = 0, UB = VIH, LB = VIH
ISB2
CMOS Standby
VDD = Max.,
Com.
15
15
µA
Current(CMOSInputs) CS1≥ VDD–0.2V,
Ind.
15
15
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
OR
ULB Control
VDD = Max., CS1 = VIL,
VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
05/02/05