IS41C16100_05 Datasheet, PDF (5/23 Pages) Integrated Silicon Solution, Inc – 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41C16100
IS41LV16100
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameters
Rating Unit
VT
Voltage on Any Pin Relative to GND
5V –1.0 to +7.0 V
3.3V –0.5 to +4.6
VCC
Supply Voltage
5V
3.3V
–1.0 to +7.0 V
–0.5 to +4.6
IOUT
Output Current
50
mA
PD
Power Dissipation
1
W
TA
Commercial Operation Temperature
Industrial Operationg Temperature
0 to +70 °C
-40 to +85 °C
TSTG
Storage Temperature
–55 to +125 °C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
ISSI ^®
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VCC
Parameter
Supply Voltage
VIH
Input High Voltage
VIL
Input Low Voltage
TA
Commercial Ambient Temperature
Industrial Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Min. Typ.
Max.
Unit
4.5 5.0
5.5
V
3.0 3.3
3.6
2.4
— VCC + 1.0
V
2.0
— VCC + 0.3
–1.0 —
0.8
V
–0.3 —
0.8
0
—
70
°C
–40 —
85
°C
CAPACITANCE^(1,2)
Symbol
Parameter
Max.
CIN1
Input Capacitance: A0-A9
5
CIN2
Input Capacitance: RAS, UCAS, LCAS, WE, OE
7
CIO
Data Input/Output Capacitance: I/O0-I/O15
7
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz.
Unit
pF
pF
pF
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. L
12/22/05