IS41C16100_05 Datasheet, PDF (3/23 Pages) Integrated Silicon Solution, Inc – 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41C16100
IS41LV16100
ISSI ^®
TRUTH TABLE
Function
Standby
Read: Word
Read: Lower Byte
RAS LCAS UCAS WE
H
H
H
X
L
L
L
H
L
L
H
H
OE Address tR/tC
X
X
L
ROW/COL
L
ROW/COL
Read: Upper Byte
L
H
L
H
L
ROW/COL
Write: Word (Early Write)
Write: Lower Byte (Early Write)
L
L
L
L
X
ROW/COL
L
L
H
L
X
ROW/COL
Write: Upper Byte (Early Write)
L
H
L
L
X
ROW/COL
Read-Write^(1,2)
L
L
L H→L L→H ROW/COL
EDO Page-Mode Read⁽²⁾ 1stCycle:
2nd Cycle:
Any Cycle:
L H→L H→L H
L
ROW/COL
L H→L H→L H
L
NA/COL
L L→H L→H H
L
NA/NA
EDO Page-Mode Write⁽¹⁾ 1stCycle:
2nd Cycle:
L H→L H→L L
X
ROW/COL
L H→L H→L L
X
NA/COL
EDO Page-Mode^(1,2)
Read-Write
1st Cycle:
2nd Cycle:
L H→L H→L H→L L→H ROW/COL
L H→L H→L H→L L→H
NA/COL
Hidden Refresh
RAS-Only Refresh
Read⁽²⁾
L→H→L L
L
H
L
ROW/COL
Write^(1,3)
L→H→L L
L
L
X
ROW/COL
L
H
H
X
X
ROW/NA
CBR Refresh⁽⁴⁾
H→L L
L
X
X
X
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active).
2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active).
3. EARLY WRITE only.
4. At least one of the two CAS signals must be active (LCAS or UCAS).
I/O
High-Z
DOUT
Lower Byte, DOUT
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, DOUT
DIN
Lower Byte, DIN
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, DIN
DOUT, DIN
DOUT
DOUT
DOUT
DIN
DIN
DOUT, DIN
DOUT, DIN
DOUT
DOUT
High-Z
High-Z
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. L
12/22/05