IS43R16800A1 Datasheet, PDF (41/72 Pages) Integrated Silicon Solution, Inc – 8Meg x 16 128-MBIT DDR SDRAM

IS43R16800A1
ISSI ^®
Precharge Command
CK
CK
CKE
HIGH
CS
RAS
CAS
WE
A0-A9, A11
A10
BA0, BA1
All Banks
One Bank
BA
BA = bank address
(if A10 is Low, otherwise Don’t Care).
Don’t Care
Precharge
The Precharge command is used to deactivate the open row in a particular bank or the open row in all banks. The
bank(s) is available for a subsequent row access some specified time (t_RP) after the Precharge command is
issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank
is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are
treated as “Don’t Care.” Once a bank has been precharged, it is in the idle state and must be activated prior to any
Read or Write commands being issued to that bank.
Integrated Silicon Solution, Inc. — 1-800-379-4774
©
41
Rev. 00A
N
04/17/06