IS43R16800A1 Datasheet, PDF (1/72 Pages) Integrated Silicon Solution, Inc – 8Meg x 16 128-MBIT DDR SDRAM

IS43R16800A1
ISSI^®
8Meg x 16
128-MBIT DDR SDRAM
FEATURES
• Clock Frequency: 200, 166 MHz
• Power supply (VDD and VDDQ): 2.6V
• SSTL 2 interface
• Four internal banks to hide row Pre-charge
and Active operations
• Commands and addresses register on positive
clock edges (CK)
• Bi-directional Data Strobe signal for data cap-
ture
• Differential clock inputs (CK and CK) for
two data accesses per clock cycle
• Data Mask feature for Writes supported
• DLL aligns data I/O and Data Strobe transitions
with clock inputs
• Programmable burst length for Read and Write
operations
• Programmable CAS Latency (2.5, 3 clocks)
• Programmable burst sequence: sequential or
interleaved
• Burst concatenation and truncation supported
for maximum data throughput
• Auto Pre-charge option for each Read or Write
burst
• 4096 refresh cycles every 64ms
• Auto Refresh and Self Refresh Modes
• Pre-charge Power Down and Active Power
Down Modes
• Lead-free Availability
PRELIMINARY INFORMATION
APRIL 2006
DEVICE OVERVIEW
ISSI’s 128-Mbit DDR SDRAM achieves high-speed data
transfer using pipeline architecture and two data word
accesses per clock cycle. The 134,217,728-bit memory
array is internally organized as four banks of 32M-bit to
allow concurrent operations. The pipeline allows Read
and Write burst accesses to be virtually continuous, with
the option to concatenate or truncate the bursts. The
programmable features of burst length, burst sequence
and CAS latency enable further advantages. The device
is available in 16-bit data word size. Input data is regis-
tered on the I/O pins on both edges of Data Strobe
signal(s), while output data is referenced to both edges of
Data Strobe and both edges of CK. Commands are
registered on the positive edges of CK. Auto Refresh,
Active Power Down, and Pre-charge Power Down modes
are enabled by using clock enable (CKE) and other
inputs in an industry-standard sequence. All input and
output voltage levels are compatible with SSTL 2.
IS43R16800A1
1M x16x8 Banks
VDD: 2.6V
VDDQ: 2.6V
66-pin TSOP-II
KEY TIMING PARAMETERS
Parameter
-5
Unit
DDR400
Clock Cycle Time
CAS Latency = 3
5
ns
CAS Latency = 2.5
6
ns
CAS Latency = 2
—
ns
Clock Frequency
CAS Latency = 3
200
MHz
CAS Latency = 2.5
166
MHz
CAS Latency = 2
—
MHz
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. 00A
04/17/06