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IS61WV1288EEBLL Datasheet, PDF (4/16 Pages) Integrated Silicon Solution, Inc – 256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC | |||
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IS61/64WV1288EEBLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 3.3V + 10%
Symbol Parameter
Test Conditions
Min.
Voh
Output HIGH Voltage
Vdd = Min., Ioh = â4.0 mA
2.4
Vol
Output LOW Voltage
Vdd = Min., Iol = 8.0 mA
â
Vih
Input HIGH Voltage
2
Vil
Input LOW Voltage(1)
â0.3
Ili
Input Leakage
GND ⤠Vin ⤠Vdd
â1
Ilo
Output Leakage
GND ⤠Vout ⤠Vdd, Outputs Disabled
â1
Note:
1. Vil (min.) = â0.3V DC; Vil (min.) = â2.0V AC (pulse width < 2 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width < 2 ns). Not 100% tested.
Max.
â
0.4
Vdd + 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 2.4V-3.6V
Symbol Parameter
Test Conditions
Min.
Voh
Output HIGH Voltage
Vdd = Min., Ioh = â1.0 mA
1.8
Vol
Output LOW Voltage
Vdd = Min., Iol = 1.0 mA
â
Vih
Input HIGH Voltage
2.0
Vil
Input LOW Voltage(1)
â0.3
Ili
Input Leakage
GND ⤠Vin ⤠Vdd
â1
Ilo
Output Leakage
GND ⤠Vout ⤠Vdd, Outputs Disabled
â1
Note:
1. Vil (min.) = â0.3V DC; Vil (min.) = â2.0V AC (pulse width < 2 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width < 2 ns). Not 100% tested.
Max.
â
0.4
Vdd + 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 -10 -20
Symbol Parameter
Test Conditions Min. Max. Min. Max. Min. Max. Unit
Icc
Vdd Dynamic Operating Vdd = Max.,
Supply Current
Iout = 0 mA, f = fmax
Com. â 40
â 30
Ind. â 45
â 35
Auto. â â
â 50
typ.(2) 21 21
â 25 mA
â 30
â 45
Icc1
Operating
Supply Current
Vdd = Max.,
Iout = 0 mA, f = 0
Com. â 20
Ind. â 25
Auto. â â
â 20
â 25
â 40
â 20 mA
â 25
â 40
Isb1
TTL Standby Current
(TTL Inputs)
Vdd = Max.,
Vin = Vih or Vil
CE ⥠Vih, f = 0
Com. â 10
Ind. â 15
Auto. â â
â 10
â 15
â 30
â 10 mA
â 15
â 30
Isb2
CMOS Standby
Current (CMOS Inputs)
Vdd = Max.,
CE ⥠Vdd â 0.2V,
Vin ⥠Vdd â 0.2V, or
Vin ⤠0.2V, f = 0
Com. â 5
Ind. â 6
Auto. â â
typ.(2)
1.5
â 5
â 6
â 15
1.5
â 5
mA
â 6
â 15
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vdd = 3.0V, Ta = 25oC and not 100% tested.
4
Integrated Silicon Solution, Inc. â www.issi.com
Rev. 00A
10/10/2012
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