IS61LV25616 Datasheet, PDF (4/11 Pages) Integrated Circuit Solution Inc – 256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV25616
ISSI ^®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
VOH
VOL
VIH
VIL
ILI
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage⁽¹⁾
Input Leakage
Test Conditions
VCC = Min., IOH = –4.0 mA
VCC = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VCC
ILO
Output Leakage
GND ≤ VOUT ≤ VCC, 4
Outputs Disabled
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
Com.
Ind.
Com.
Ind.
Min.
2.4
—
2.0
–0.3
–1
–5
–1
–5
Max.
—
0.4
VCC + 0.3
0.8
1
5
1
5
Unit
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
-7, -8
-10
-12
-15
Min. Max. Min. Max. Min. Max. Min. Max. Unit
ICC
Vcc Dynamic Operating VCC = Max.,
Com. — 260 — 260 — 240 — 220 mA
Supply Current
IOUT = 0 mA, f = fMAX Ind. — 300
— 300
— 280
— 250
ISB
TTL Standby Current
VCC = Max.,
Com. — 85
— 85
— 75
— 65 mA
(TTL Inputs)
VIN = VIH or VIL
Ind. — 95
— 95
— 85
— 75
CE ≥ VIH, f = fMAX.
ISB1
TTL Standby Current
VCC = Max.,
Com. — 20
— 20
— 20
— 20 mA
(TTL Inputs)
VIN = VIH or VIL
Ind. — 25
— 25
— 25
— 25
CE ≥ VIH, f = 0
ISB2
CMOS Standby
VCC = Max.,
Com. — 10
— 10
— 10
— 10 mA
Current (CMOS Inputs) CE ≥ VCC – 0.2V,
Ind.
— 15
— 15
— 15
— 15
VIN ≥ VCC – 0.2V, or
VIN ≤ 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Shaded area product in development
CAPACITANCE⁽¹⁾
Symbol
CIN
COUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
6
pF
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
09/29/00