IS63LV1024 Datasheet, PDF (3/8 Pages) Integrated Silicon Solution, Inc – 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

IS63LV1024
ISSI ^®
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VCC
3.3V ± 0.3V
3.3V ± 0.15V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
Test Conditions
VCC = Min., IOH = –4.0 mA
VCC = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VCC
ILO
Output Leakage
GND ≤ VOUT ≤ VCC, Outputs Disabled
Notes:
1. VIL = –3.0V for pulse width less than 10 ns.
Com.
Ind.
Com.
Ind.
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Min.
2.4
—
2.2
–0.3
–1
–5
–1
–5
Max.
—
0.4
VCC + 0.3
0.8
1
5
1
5
Unit
V
V
V
V
µA
µA
Symbol Parameter
Test Conditions
ICC1 Vcc Operating VCC = Max., CE = VIL Com.
Supply Current IOUT = 0 mA, f = Max. Ind.
ISB
TTL Standby
VCC = Max.,
Com.
Current
VIN = VIH or VIL
Ind.
(TTL Inputs)
CE ≥ VIH, f = Max
ISB1 TTL Standby
VCC = Max.,
Com.
Current
VIN = VIH or VIL
Ind.
(TTL Inputs)
CE ≥ VIH, f = 0
ISB2 CMOS Standby VCC = Max.,
Com.
Current
CE ≤ VCC – 0.2V,
Ind.
-8 ns
Min. Max.
— 160
— 170
— 55
— 55
— 25
— 30
—5
— 10
-10 ns
Min. Max.
— 150
— 160
— 45
— 45
— 25
— 30
—5
— 10
-12 ns
Min. Max.
— 130
— 140
— 40
— 40
— 25
— 30
—5
— 10
-15 ns
Min. Max. Unit
— 120 mA
— 130
— 35 mA
— 35
— 25 mA
— 30
— 5 mA
— 10
(CMOS Inputs)
VIN ≥ VCC – 0.2V, or
VIN ≤ 0.2V, f = 0
Notes:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE^(1,2)
Symbol Parameter
Conditions
Max.
CIN
Input Capacitance
VIN = 0V
6
CI/O
Input/Output Capacitance
VOUT = 0V
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.
Unit
pF
pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. H
10/02/00