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75V16F64GS16 Datasheet, PDF (26/50 Pages) Integrated Silicon Solution, Inc – 64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
75V16F64GS16
ISSI ®
WRITE/ERASE/PROGRAM OPERATIONS (Continued)
Parameter
OE Setup Time to WE Active (2)
CE Setup Time to WE Active (2)
Recover Time from RY/BY
RESET Pulse Width
RESET High Level Period Before Read
Program/Erase Valid to RY/BY Delay
Delay Time from Embedded Output Enable
Erase Time-Out Time
Erase Suspend Transition Time
Notes:
1. Does not include preprogramming time.
2. For Sector Group Protection operation.
3. For Accelerated Program operation.
JEDEC Standard
Symbol Symbol
Min Typ Max
Unit
—
tOESP
4——
µs
—
tCSP
4——
µs
—
tRB
0——
ns
—
tRP
500 — —
ns
—
tRH
200 — —
ns
—
tBUSY
— — 90
ns
—
tEOE
— — 70
ns
—
tTOW
50 — —
µs
—
tSPD
— — 20
µs
26
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00A
08/01/02