IS45S81600E Datasheet, PDF (18/61 Pages) Integrated Silicon Solution, Inc – 16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM

IS45S81600E, IS45S16800E
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
Symbol Parameter
—
Clock Cycle Time
—
Operating Frequency (CASLatency = 3)
tcac
CASLatency
trcd
Active Command To Read/Write Command Delay Time
trac
RAS Latency (trcd + tcac)
CASLatency = 3
trc
Command Period (REF to REF / ACT to ACT)
tras
Command Period (ACT to PRE)
trp
Command Period (PRE to ACT)
trrd
Command Period (ACT[0] to ACT [1])
tccd
Column Command Delay Time
(READ, READA, WRIT, WRITA)
tdpl
Input Data To Precharge Command Delay Time
tdal
Input Data To Active/Refresh Command Delay Time
(During Auto-Precharge)
trbd
Burst Stop Command To Output in HIGH-Z Delay Time CASLatency = 3
(Read)
twbd
Burst Stop Command To Input in Invalid Delay Time
(Write)
trql
Precharge Command To Output in HIGH-Z Delay Time CASLatency = 3
(Read)
twdl
Precharge Command To Input in Invalid Delay Time
(Write)
tpql
Last Output To Auto-Precharge Start Time (Read) CASLatency = 3
tqmd
DQM To Output Delay Time (Read)
tdmd
DQM To Input Delay Time (Write)
tmrd
Mode Register Set To Command Delay Time
-6
-7 Units
6
7
ns
166
143
MHz
3
3
cycle
3
3
cycle
6
6
cycle
10
10
cycle
7
7
cycle
3
3
cycle
2
2
cycle
1
1
cycle
2
2
cycle
5
5
cycle
3
3
cycle
0
0
cycle
3
3
cycle
0
0
cycle
-2
–2
cycle
2
2
cycle
0
0
cycle
2
2
cycle
18
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
02/19/09