IS61WV10248ALL Datasheet, PDF (16/20 Pages) Integrated Silicon Solution, Inc – 1M x 8 HIGH-SPEED CMOS STATIC RAM

IS61WV10248ALL
IS61WV10248BLL
IS64WV10248BLL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
VDR
VDD for Data Retention
See Data Retention Waveform
IDR
Data Retention Current
VDD = 1.2V, CE ≥ VDD – 0.2V
Ind.
Auto.
typ.⁽¹⁾
tSDR
Data Retention Setup Time See Data Retention Waveform
tRDR
Recovery Time
See Data Retention Waveform
Note:
1. Typical values are measured at VDD = 3.0V, TA = 25^oC and not 100% tested.
DATA RETENTION WAVEFORM (CE Controlled)
VDD
1.65V
1.4V
VDR
CE
GND
tSDR
Data Retention Mode
CE ≥ VDD - 0.2V
Min. Max. Unit
1.2 3.6 V
—
25 mA
—
70
4
0
— ns
tRC
— ns
tRDR
16
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
06/03/08