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IS61QDB21M18A Datasheet, PDF (13/30 Pages) Integrated Silicon Solution, Inc – 512Kx36 and 1Mx18 configuration available
IS61QDB21M18A
IS61QDB251236A
Electrical Specifications
Absolute Maximum Ratings
Parameter
Power Supply Voltage
I/O Power Supply Voltage
DC Input Voltage
Data Out Voltage
Junction Temperature
Storage Temperature
Symbol
VDD
VDDQ
VIN
VDOUT
TJ
TSTG
Min
Max
Units
0.5
2.9
V
0.5
2.9
V
0.5
VDD+0.3
V
0.5
2.6
V
-
110
°C
55
+125
°C
Note:
Stresses greater than those listed in this table can cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational sections of this datasheet is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Operating Temperature Range
Temperature Range
Symbol
Min
Commercial
Industrial
TA
0
TA
40
Max
Units
+70
°C
+85
°C
DC Electrical Characteristics
(Over the Operating Temperature Range, VDD=1.8V±5%)
Parameter
x36 Average Power Supply Operating Current
(IOUT=0, VIN=VIH or VIL )
x18 Average Power Supply Operating Current
(IOUT=0, VIN=VIH or VIL )
Power Supply Standby Current
(R#=VIH, W#=VIH. All other inputs=VIH or VIL, IIH=0)
Input leakage current
( 0 ≤VIN≤VDDQ for all input balls except VREF, ZQ, TCK,
TMS, TDI ball)
Output leakage current
(0 ≤VOUT ≤VDDQ for all output balls except TDO ball; Output
must be disabled.)
Output “high” level voltage (IOH=-0.1mA, ZQnorm)
Output “low” level voltage (IOL=+0.1mA, ZQnorm)
Symbol
IDD30
IDD33
IDD40
IDD30
IDD33
IDD40
ISB30
ISB33
ISB40
ILI
ILO
VOH
VOL
Notes:
1. IOUT = chip output current.
2. The numeric suffix indicates the part operating at speed, as indicated in
time).
3. DOFF# Ball does not follow this spec, ILI = ±100uA
Min



2
2
VDDQ0.2
VSS
Max
1100
1000
900
1050
950
850
440
420
390
+2
+2
VDDQ
VSS+0.2
Units
mA
Notes
1, 2
mA
1, 2
mA
1,2
µA
3
µA
V
V
(that is, IDD25 indicates 2.5ns cycle
Integrated Silicon Solution, Inc.- www.issi.com
13
Rev. B
10/02/2014